, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 byx56 series controlled avalanche rectifier diodes silicon diodes in a do?5 metal envelope, capable of absorbing transients and intended for power rectifier applications. the series consists of the following types: normal polarity (cathode to stud}: byx56-600 to byx56-1400. reverse polarity (anode to stud): byx56-600r to byx56-1400r. quick reference data crest working reverse voltage reverse avalanche breakdown voltage average forward current non-repetitive peak forward current non-repetitive peak reverse power dissipation vrwm v(br)r 'f(av) 'fsm prsm byx56-600(r) max. 600 > 750 800(r) 800 1000 |1000(r) 1000 1250 1200(r) 1200 1450 1400(r) 1400 v 1650 v v max. 48 a max. 800 a max. 40 kw mechanical data fig. 1 do-5 dimensions in mm 15.3 max '/4inx28unf 1 / 6.35 _ max 4 2.2 _ max , 11,5 10.7 ~ -* 5.0 max ?4 \. . _ 3. \^ 1^ .12.7 ? max j \ m _j ?r\s* { << .^ 3.0 t"* 2 rnm (flat) 25.4 8.0 max t f ^ -* ? max net mass: 22 g diameter of clearance hole: max. 6.5 mm accessories supplied on request: see accessories section supplied with device: 1 nut, 1 lock washer. mut dimensions across the flats: 11.1 mm. torque on nut: min. 1.7 nm (17 kg cm), max.3.5 nm (35 kg cm). the mark shown applies to normal polarity types. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
ratings limiting values in accordance with the absolute maximum system (iec134) voltages* crest working reverse voltage vrwm max continuous reverse voltage vr byx56-600ir) max. 600 max. 600 800 (r) 800 800 10001r) 1000 1000 12001r) 1200 1200 1400(r) 1400 v 1400 v currents average forward current (averaged over any 20 ms period) uptotmb=112c attmb=125c r.m.s. forward current repetitive peak forward current non-repetitive peak forward current t = 10 ms (half sine-wave); tj = 175 c prior to surge; with reapplied vrwmmax lat for fusing (t < 10 ms) reverse power dissipation repetitive peak reverse power dissipation t = 10 ais (square-wave; f = 50 hz); tj= 175 c non-repetitive peak reverse power dissipation t = 10 ms (square-wave) tj = 25 c prior to surge tj = 175 c prior to surge temperatures storage temperature junction temperature thermal resistance from junction to mounting base from mounting base to heatsink transient thermal impedance; t= 1 ms 'f(av) 'f(av) 'firms) 'frm 'fsm ijt prrm prsm prsm tstg tj rth j-mb rth mb-h zth j-h max. 48 max. 40 max. 75 max. 450 max. 800 max. 3200 max. 6.5 max. 40 max. 6.5 -55 to +175 max. 175 0.8 0.2 0.03 a a a a a a's kw kw kw oc c oc/w c/w oq/w
characteristics forward voltage if - 150a;tj = 25c vp reverse avalanche breakdown voltage v(br)r reverse current vr "? vrwmmax; t = 125c "r byx56-600(r) < 1.8 > 750 < 2400 < 1.6 800(r) 1.8 1000 2400 1.6 1000ir) 1.8 1250 2400 1.6 1200(r) 1.8 1450 2400 1.6 1400(r) 1.8 v* 1650 v 2400 v 1.6 ma operating notes the top connector should neither be bent nor twisted; it should be soldered into the circuit so that there is no strain on it. during soldering the heat conduction to the junction should be kept to a minimum by using a thermal shunt. 600 if (a) 400 200 tj=25 to 175c ? f m r d8494 2 vr(v) 4
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